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  d a t a sh eet product speci?cation file under integrated circuits, ic02 1997 mar 07 integrated circuits TSA5518M 1.3 ghz bidirectional i 2 c-bus controlled synthesizer
1997 mar 07 2 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M features complete 1.3 ghz single chip system low power 5 v, 40 ma i 2 c-bus programming one pin crystal oscillator in-lock flag varicap drive disable low radiation address selection for picture in picture (pip), dbs tuner, and so on 5-level a/d converter 7 bus-controlled ports (4 open-collector outputs and 3 emitter follower outputs), 1 bidirectional port power-down flag mixer/oscillator bandswitch output available in ssop20 package. applications tv tuners and front-ends vcr tuners. general description the device is a single chip pll frequency synthesizer designed for tv tuning systems. control data is entered via the i 2 c-bus; five serial bytes are required to address the device, select the oscillator frequency, program the 7 output ports and set the charge-pump current. the output port p6 is combined with an a/d converter input. digital information concerning this port can be read out of the sda line (one status byte) during a read operation. a flag is set when the loop is in-lock and is read during a read operation. the device has one fixed i 2 c-bus address, programmed by applying a specific voltage on as input. the phase comparator operates at 7.8125 khz when a 4 mhz crystal in used. the device provides a bandswitch output to select the bands of the mixer/oscillator ics tda5330, tda5630a except tda5630/c1 and tda5730 with the appropriate voltage level. quick reference data ordering information symbol parameter conditions min. typ. max. unit v cc supply voltage 4.5 5 5.5 v i cc supply current - 40 - ma f i frequency 80 - 1300 mhz v i(rms) input voltage level (rms value) 80 to 150 mhz 12 - 300 mv 150 mhz to 1.0 ghz 9 - 300 mv 1 ghz to 1.3 ghz 40 - 300 mv f xtal crystal oscillator frequency 3.2 4 4.48 mhz i o output current emitter follower on p4, p5 and p7 -- 5ma open-collector p0, p1 and p2 -- 20 ma open-collector p6 -- 10 ma t amb operating ambient temperature - 10 - +80 c r th j-a thermal resistance from junction to ambient -- 120 k/w type number package name description version TSA5518M ssop20 plastic shrink small outline package; 20 leads; body width 4.4 mm sot266-1
1997 mar 07 3 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M block diagram handbook, full pagewidth mgk115 15-bit latch divider ratio 8-bit latch port information latch & control data in-lock detector charge pump 8-bit a/d converter power-down detector divider n = 512 prescaler divide-by-8 oscillator 4 mhz i 2 c-bus transceiver address selection band switch logic gate 15-bit programable divider digital phase comparator 7.8125 khz f ref f div t1 os to op 20 1 17 9 5 pd ud output v cc gnd bs 8 7 19 16 15 rf1 rf2 xtal scl sda 11 12 10 14 13 4 3 2 p0 as p1 p2 p6 p4 p5 p7 input fig.1 block diagram.
1997 mar 07 4 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M pinning symbol pin description ud 1 drive output (ud) p7 2 p7 output port p5 3 p5 output port p4 4 p4 output port bs 5 bandswitch output for m/o drive n.c 6 not connected rf2 7 uhf/vhf signal input 2 rf1 8 uhf/vhf signal input 1 gnd 9 ground p1 10 p1 output port (general purpose) p0 11 p0 output port (general purpose) as 12 input for address selection p6 13 p6 port (output/input for general purpose adc) p2 14 p2 output port (f div if the test mode is active) sda 15 i 2 c-bus serial data input/output scl 16 i 2 c-bus serial clock v cc 17 voltage supply n.c 18 not connected xtal 19 crystal oscillator input pd 20 charge-pump output (pd) fig.2 pin configuration. handbook, halfpage TSA5518M mbh947 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 ud pd p7 xtal p5 n.c. p4 v cc bs rf2 rf1 gnd p1 scl n.c. sda p2 p6 as p0 functional description the device is controlled via the two wire i 2 c-bus. for programming, there is one module address (7 bits) and the r/w bit for selecting read or write mode. write mode the write data format is summarized in table 1. after the address transmission (first byte), data bytes can be sent to the device. four data bytes are needed to fully program the device. the bus transceiver has an auto increment facility which permits the programming of the device within one single transmission (address byt e + 4 data bytes). the device can also be partially programmed on the condition that the first data byte following the address is byte 2 or 4. the meaning of the bits in the data bytes is given in table 3. the first bit of the first data byte transmitted indicates whether frequency data (first bit = 0) or charge pump and port information (first bit = 1) will follow. until an i 2 c-bus stop condition is sent by the controller, additional data bytes can be entered without the need to re-address the device. this allows a smooth frequency sweep for fine tuning or afc purpose. at power-on the ports are set to the high-impedance state (open-collector outputs) or at the high level (emitter follower outputs). the bandswitch output bs provides a voltage output suitable for the band selection input of mixer/oscillator ics tda5330, tda5630a and tda5730. it is controlled by b1 and b0 bits or p7, p5 and p4 bits depending on the bsc bit (see tables 1 to 4). the 7.8125 khz reference frequency is obtained by dividing the output of the 4 mhz crystal oscillator by 512. because the input of uhf/vhf signal is first divided-by-8 the step size is 62.5 khz. a 3.2 mhz crystal can offer step size of 50 khz.
1997 mar 07 5 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M table 1 write data format table 2 explanation of table 1 byte description ms b lsb acknowledge 1 address 11000 ma1ma00 low from device 2 programmable divider 0 n14 n13 n12 n11 n10 n9 n8 low from device 3 programmable divider n7 n6 n5 n4 n3 n2 n1 n0 low from device 4 charge-pump, bandswitch and test bits 1 cp t1 t0 bsc b1 b0 os low from device 5 output ports control bits p7 p6 p5 p4 x p2 p1 p0 low from device bit description ma1, ma0 programmable address bits (see table 7) n14, .. , n0 programmable divider bits n = n14 2 14 + n13 2 13 +...+ n1 2 1 +n0 cp charge pump current cp=0to50 m a; cp=1to220 m a t1, t0, os t1 = 0, t0 = 0, os = 0: normal operation t1 = 1: p2 = f div , p6 = f ref t0 = 1: 3-state charge pump os = 1: operational amplifier output is switched off (varicap drive disable) bsc bandswitch control bit bsc = 0: bandswitch output is controlled by b1 and b0 bits according to table 3 bsc = 1: bandswitch output is controlled by p7, p5 and p4 bits according to table 4 b1, b0 bandswitch control bits p6, p2, p1 and p0 p6, p2 .. p0 = 1: open-collector outputs are active p6, p2 .. p0 = 0: outputs are in high impedance state p4, p5 and p7 p4, p5 and p7 = 1: outputs are at low level p4, p5 and p7 = 0: emitter follower outputs are active x dont care table 3 bs output control (bsc = 0) b1 b0 voltage on pin bs 0 0 0.25 v 01 2v 10 4v 11 v cc table 4 bs output control (bsc = 1) p7 p5 p4 voltage on pin bs 1 1 0 0.25 v 101 2v 011 4v
1997 mar 07 6 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M read mode the read data format is summarised in table 5. data can be read out of the device by setting the r/w bit to logic 1. after the slave address has been recognized, the device generates an acknowledge pulse and the status word is transferred on the sda line (msb first). data is valid on the sda line during a high of the scl clock signal. a second data byte can be read out of the device if the processor generates an acknowledge on the sda line. end of transmission will occur if no acknowledge from the processor occurs.the device will then release the data line to allow the processor to generate a stop condition. when the port p6 is used as input, it must be programmed in its high-impedance state. the por flag (power-on reset) is set to logic 1 when v cc goes below 3 v and at power-on. it is reset when an end of data is detected by the device (end of a read sequence). control of the loop is made possible with the in-lock flag fl which indicates (fl = 1) when the loop is phase-locked. a built-in % level a/d converter is available on i/o port p6. this converter can be used to feed afc information to the controller from the if section of the television as illustrated in the typical application circuit in fig.2. the relationship between bit a2, a1 and a0 and the input voltage on port p6 is given in table 6. table 5 read data format notes 1. see table 7. 2. por: power-on reset flag. (por = 1 on power-on). 3. fl: in lock flag (fl = 1 when the loop is phase-locked). 4. a2, a1, a0: digital outputs of the 5 level a/d converter (see table 6). accuracy is 1 2 lsb. msb is transmitted first. 5. upon an acknowledge pulse from the controller, the device transfers the status byte again. if no acknowledge pulse from the controller is received, data read is terminated. byte description msb lsb acknowledge 1 address 11000ma1 (1) ma0 (1) 1 low from device 2, .. status byte(s) por (2) fl (3) 000a2 (4) a1 (4) a0 (4) note 5 table 6 a/d converter levels accuracy on the switching levels is 0.02v cc . table 7 address selection voltage applied on pin p6 a2 a1 a0 0.6v cc to 5.5 v 1 0 0 0.45v cc to 0.6v cc 011 0.3v cc to 0.45v cc 010 0.15v cc to 0.3v cc 001 0 to 0.15v cc 000 voltage applied on pin as ma1 ma0 0 to 0.1v cc 00 always valid 0 1 0.4 to 0.6v cc 10 0.9v cc to v cc 11 address selection the module address contains programmable address bits (ma1 and ma0) which offer the possibility of having several synthesizers (up to 3) in one system by applying a specific voltage on as input. the relationship between ma1 and ma0 and the input voltage on as input is given in table 7. frequency lock ?ag (fl) de?nition when the fl flag is logic 1, the maximum frequency deviation df from stable frequency can be expressed as: with: k vco = oscillator slope (hz/v) i cp = charge pump current (a) k o =4 10 6 c1, c2 = loop filter capacitors. df k vco k o ------------- i cp c1 c2 + c1 c2 --------------------- =
1997 mar 07 7 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M limiting values limiting values in accordance with the absolute maximum rating system (iec 134). handling every pin withstands the esd test in accordance with mil-std-833c category b (2000 v). every pin withstands the esd test in accordance with philips semiconductor machine model 0 w , 200 pf. thermal characteristics symbol parameter conditions min. max. unit v cc supply voltage - 0.3 +6 v v i(xtal) voltage at pin xtal - 0.3 +v cc v v i(scl) voltage at pin scl - 0.3 +6 v v sda voltage at pin sda - 0.3 +6 v v i(as) voltage at pin as - 0.3 +v cc v v o(bs) voltage at pin bs - 0.3 +v cc v v i(rf) voltage at pins rf1 and rf2 - 0.3 +v cc v v o output voltage at ports p0, p2 and p6 - 0.3 +16 v output voltage at ports p4, p5 and p7 - 0.3 +v cc v v pd output voltage at pin pd - 0.3 +v cc v v ud output voltage at pin ud - 0.3 +v cc v i sda output current at pin sda open collector - 1+5ma i o output current at pins p0, p1 and p2 - 1 +20 ma output current at pins p4, p5 and p7 emitter follower - 1 +10 ma output current at pin p6 open collector - 1 +10 ma t stg storage temperature - 40 +150 c t j(max) maximum junction temperature - 150 c t sc(gnd)(max) maximum short circuit time to gnd one pin to gnd (v cc = 5.5 v; gnd = 0 v) - 10 s t sc(vcc)(max) maximum short circuit time to v cc one pin to v cc (v cc = 5.5 v; gnd = 0 v) - 10 s symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient in free air 120 k/w
1997 mar 07 8 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M characteristics v cc = 4.5 to 5.5 v; t amb = - 10 to +80 c; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit operating characteristics v cc supply voltage 4.5 - 5.5 v t amb operating ambient temperature - 10 - +80 c f i input frequency 80 - 1300 mhz n divider note 1 256 - 32767 i cc supply current 25 40 50 ma crystal oscillator f osc oscillator frequency 3.2 4 4.48 mhz z i(xtal) input impedance on pin xtal --- 450 w v o(xtal) output drive level on pin xtal - 40 - mv v i(rf) input level see fig.3 12 - 300 mv f i = 80 to 150 mhz 9 - 300 mv f i = 150 to 1000 mhz 40 - 300 mv f i = 1000 to 1300 mhz -- 10 mv ?atness of the minimum sensitivity 150 - 1000 mhz prescaler input impedance see fig.4 output port p0, p1 and p2 (open collector); note 1 i lo output leakage current v pn = 13.5 v -- 10 m a i o(sink) output sink current note 2 -- 20 ma v ol low-level output voltage i pn =15ma -- 0.5 v c l(max) maximum capacitive loading on output pin v pn = 5.5 v -- 100 nf output ports p4, p5 and p7 (emitter follower) v oh high-level output voltage i port =3ma v cc - 1 -- v i oh high-level output current - 35 ma output port p6 (open collector) i lo output leakage current v p6 = 13.5 v - 110 m a i o(sink) output sink current note 2 -- 10 ma v ol low-level output voltage i p6 =5ma -- 0.4 v c l(max) maximum capacitive loading on output pin v p6 = 5.5 v -- 100 nf input port as i ih high-level input current v ash =v cc -- 10 m a i il high-level input current v asl =0v - 10 -- m a input port p6 i ih high-level input current v p6h = 5.5 v -- 10 m a i il low-level input current v p6l =0v - 10 -- m a
1997 mar 07 9 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M notes 1. if the dividing number n is set to less than 256, a dividing number of 256 is used. 2. when a port is active, the collector voltage may not exceed 6 v. 3. measured with all other ports active at max. current (10 ma or 20 ma respectively). 4. see the i 2 c-bus and how to use it , order no. 9398 393 40011. bandswitch output bs v o(bsa) output voltage for band a i source(bsa) =20 m a - 0.25 0.5 v v o(bsb) output voltage for band b i source(bsb) =20 m a; note 3 0.36 v cc 0.4 v cc 0.43 v cc v v o(bsc) output voltage for band c i source(bsc) =20 m a; note 3 0.7 v cc 0.8 v cc 0.9 v cc v i 2 c-bus inputs scl, sda ; note 4 v ih high-level input voltage 3 - 5.5 v v il low-level input voltage -- 1.5 v hys i input hysteresis v cc =5v - 250 - mv i ih high-level input current v bh = 5.5 v; v cc =0v -- 10 m a v bh = 5.5 v; v cc = 5.5 v -- 10 m a i il low-level input current v bl =0v; v cc =0v - 10 -- m a v bl =0v; v cc = 5.5 v - 10 -- m a output sda (open collector) i lo output leakage current v sdah =v cc -- 10 m a v o output voltage i sdal =3ma -- 0.4 v charge-pump output pd ? i oh(cp) ? high level output charge pump current cp = 1 140 220 300 m a ? i ol(cp) ? low level output charge pump current cp = 0 25 50 75 m a v o output voltage in-lock 1.5 - 2.5 v i lz off-state leakage current t0 = 1 - 5 - +5 na operational ampli?er output ud (test mode: t0 = 1) v o(off) output voltage when switched-off os = 1; i ud =1ma -- 200 mv v o(loop) output voltage when the loop is closed os = 0; t0 = 0 -- 1.2 v symbol parameter conditions min. typ. max. unit
1997 mar 07 10 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M fig.3 i/o prescaler typical input sensitivity curve: v cc = 4.5 to 5.5 v; t amb = - 10 to +80 c. handbook, halfpage 1500 0 500 1000 10 3 10 2 10 1 mgk117 guaranteed operating area f (mhz) v i(rms) (mv) fig.4 prescaler smith-chart of typical input impedance: v cc = 5 v; reference value 50 w . handbook, full pagewidth mgk118 0.2 0.5 1 2 5 0.2 0.5 1 2 5 10 10 0 0.2 0.5 1 2 5 10 + j - j 1 ghz 1.3 ghz 500 mhz 100 mhz 50 mhz
1997 mar 07 11 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M internal pin configuration pin configuration 1 and 20 2, 3 and 4 5 20 mgk127 v cc 1 v cc down up v cc mgk119 v cc v cc 2, 3, 4 mgk122 v cc v cc 5 7 and 8 10, 11, 13 and 14 12 15 pin configuration 7 mgk121 v cc v cc 8 v cc to divider v ref mgk120 v cc 10, 11, 13, 14 12 mgk123 v cc v cc mgk124 v cc 15
1997 mar 07 12 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M 16 pin configuration mgk125 v cc 16 19 pin configuration mgk126 v cc v cc 19
1997 mar 07 13 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M application information fig.5 typical application. handbook, full pagewidth mgk116 22 k w 35 k w 1 k w 1 k w 22 k w 15 nf 100 nf 1 nf 1 nf v tune 4 mhz 10 pf 5 v scl sda adc as p0 p1 p2 390 w 300 w 300 w 390 w 390 w 4.7 nf 4.7 nf 4.7 nf 4.7 nf 4.7 nf 4.7 nf 4.7 nf 4.7 nf 33 v high mid low bs rf2 rf1 bc847 filter dependent 20 1 19 2 18 3 17 4 16 5 15 6 14 7 13 8 12 9 11 ud p7 p5 p4 bs n.c. rf2 rf1 gnd p1 10 pd xtal n.c. v cc scl sda p2 p8 p3 p0 TSA5518M loop ?lter table 8 loop ?lter description min. max. unit time span between actual phase lock and fl flag setting 1024 1152 m s time span between the loop losing lock and fl flag resetting 0 128 m s handbook, halfpage mbh948 c2 r c1 fig.6 loop filter. k vco = 16 mhz/v (uhf band) i cp = 220 m a c1 = 100 nf, c2 = 15 nf df = 67.5 khz
1997 mar 07 14 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M package outline unit a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm 0.15 0 1.4 1.2 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 1.0 0.2 6.6 6.2 0.65 0.45 0.48 0.18 10 0 o o 0.13 0.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.20 mm maximum per side are not included. 0.75 0.45 sot266-1 90-04-05 95-02-25 w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a x (a ) 3 a y 0.25 110 20 11 pin 1 index 0 2.5 5 mm scale ssop20: plastic shrink small outline package; 20 leads; body width 4.4 mm sot266-1 a max. 1.5
1997 mar 07 15 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all ssop packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering is not recommended for ssop packages. this is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. if wave soldering cannot be avoided, the following conditions must be observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. even with these conditions, only consider wave soldering ssop packages that have a body width of 4.4 mm, that is ssop16 (sot369-1) or ssop20 (sot266-1) . during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1997 mar 07 16 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. purchase of philips i 2 c components data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. purchase of philips i 2 c components conveys a license under the philips i 2 c patent to use the components in the i 2 c system provided the system conforms to the i 2 c specification defined by philips. this specification can be ordered using the code 9398 393 40011.
1997 mar 07 17 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M notes
1997 mar 07 18 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M notes
1997 mar 07 19 philips semiconductors product speci?cation 1.3 ghz bidirectional i 2 c-bus controlled synthesizer TSA5518M notes
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca53 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - sp, brazil, tel. +55 11 821 2333, fax. +55 11 829 1849 spain: balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 632 2000, fax. +46 8 632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 481 7730 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2870, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 1949 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580/xxx france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, shivsagar estate, a block, dr. annie besant rd. worli, mumbai 400 018, tel. +91 22 4938 541, fax. +91 22 4938 722 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 middle east: see italy printed in the netherlands 547047/1200/01/pp20 date of release: 1997 mar 07 document order number: 9397 750 01612


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